| PART |
Description |
Maker |
| IS41C44002-50TI IS41LV44002-50T IS41C44004-50T IS4 |
4M x 4 DRAM With EDO Page Mode(3.3V,4M x 4 带扩展数据输出页模式动态RAM(刷新 2K 4米4的DRAM与江户页面模式（3.3伏，4米4带扩展数据输出页模式动态随机存储器（刷k）的
x4 EDO Page Mode DRAM x4 EDO公司页面模式的DRAM
|
Integrated Silicon Solution, Inc.
|
| A42L0616 A42L0616V-50U A42L0616S-45 A42L0616S-50 A |
1M X 16 CMOS DYNAMIC RAM WITH EDO PAGE MODE
|
AMICC[AMIC Technology]
|
| A42U2604V-80 A42U2604V-80U A42U2604 A42U2604S A42U |
4M X 4 CMOS DYNAMIC RAM WITH EDO PAGE MODE
|
AMICC[AMIC Technology]
|
| AS4C14400-70JC AS4C14400-70TC AS4C14405-70TC AS4C1 |
1M-bit × 4 CMOS DRAM (Fast page mode or EDO)
1M-bit 】 4 CMOS DRAM (Fast page mode or EDO)
|
ALSC[Alliance Semiconductor Corporation]
|
| GM71V17403C GM71V17403C-5 GM71V17403C-6 GM71V17403 |
CMOS DRAM 4,194,304 words x 4 bit, 3.3V, 50ns
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
4Mx4|3.3V|2K|5/6/7|FP/EDO DRAM - 16M
x4 EDO Page Mode DRAM 4M X 4 EDO DRAM, 70 ns, PDSO24
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| V53C832L30 |
HIGH PERFORMANCE 3.3 VOLT 256K X 32 EDO PAGE MODE CMOS DYNAMIC RAM
|
Mosel Vitelic, Corp.
|
| V53C818H V53C818H35 V53C818H30 |
HIGH PERFORMANCE 512K X 16 EDO PAGE MODE CMOS DYNAMIC RAM 高性能EDO公司512k × 16页模式的CMOS动态随机存储器
|
Mosel Vitelic, Corp.
|
| V53C16258LK50 V53C16258SLK50 V53C16258L V53C16258L |
HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH
|
MOSEL[Mosel Vitelic, Corp]
MOSEL[Mosel Vitelic Corp]
|
